申し訳ありませんが、この PDF はダウンロード形式でのみご提供しています。
High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic NanotechnologyIntroductionSince the advent of the metal-oxide semiconductor (MOS) system over 40 years ago, the SiO2 gate oxide has been serving as the key enabling material in scaling silicon CMOS technology. However, continued SiO2 gate oxide scaling is becoming exceedingly difficult since (a) the gate oxide leakage is increasing with decreasing SiO2 thickness, and (b) SiO2 is running out of atoms for further scaling. As Moore’s law extends scaling and device performance into the 21st century, high-κ gate dielectrics and metal gate electrodes will be required for high-performance and low-power CMOS applications in the 45 nm node and beyond. In addition to facilitating standard Si CMOS transistors, the high-κ/metal gate combination is also important for enabling future high-performance and low gate leakage emerging nanoelectronic transistors built upon non-silicon high-mobility materials, e.g. Ge, carbon nanotubes, and III-V substrates. The enabling of high-performance and low gate-leakage silicon and non-silicon transistor nanotechnology research via use of high-κ gate dielectrics and metal gate electrodes is discussed in this paper.Read the full High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology Paper.
Intel 3-D transistors manufactured at 22nm ensure the pace of technology advancement for years to come.
Video shows storage possibilities powered by Intel® Architecture
John Cormican, demonstrates Intel® Virtualization Technology at Embedded World 2010.
Intel presents Cedar Trail next-gen Atom™ platform at IDF 2011.
See how three Intel® Atom™ chips manage calculations behind propulsion system in BLOODHOUND SSC.
A high tech orchestra makes beautiful music.